Other contributions 2016

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Physical Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich () BibTeX | EndNote: XML, Text | RIS

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Valence Change in nanoionic oxide cells
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag 701 pp. () BibTeX | EndNote: XML, Text | RIS

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Scanning Probe Microscopy
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich 619 pp. () BibTeX | EndNote: XML, Text | RIS

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Lattice disorder in ionic crystals
Memristive Phenomena - From Fundamental Physics to Neuromorphic Computing 98 pp. () BibTeX | EndNote: XML, Text | RIS

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Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
Pennington, NJ, ECS transactions 75, 177 - 184 () [10.1149/07506.0177ecst]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Chemical Vapour Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum 339 pp. () BibTeX | EndNote: XML, Text | RIS

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Universal Switching Behavior
Resistive Switching - From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications Weinheim : Wiley-VCH 317 pp. () BibTeX | EndNote: XML, Text | RIS

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Electrochemical Metallization Memories
Resistive Switching / Ielmini, Daniele (Editor) ; Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2016, ; ISBN: 9783527334179 ; doi:10.1002/9783527680870 Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA () [10.1002/9783527680870.ch17] BibTeX | EndNote: XML, Text | RIS

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Physics and Chemistry of Nanoionic Cells
Resistive Switching / Ielmini, Daniele (Editor) ISBN: 9783527334179 Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA 253 pp. () [10.1002/9783527680870.ch9] BibTeX | EndNote: XML, Text | RIS

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Modeling the VCM- and ECM-Type Switching Kinetics
Resistive Switching - From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications Weinheim : Wiley-VCH () BibTeX | EndNote: XML, Text | RIS

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Phase Transitions
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich 157 pp. () BibTeX | EndNote: XML, Text | RIS

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(Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
Pennington, NJ, ECS transactions 75, 27 - 39 () [10.1149/07505.0027ecst]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Electroachemical metallization memories
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich 677 pp. () BibTeX | EndNote: XML, Text | RIS

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Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 20162016-09-122016-09-15 IEEE 160 pp. () [10.1109/ESSDERC.2016.7599611]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Ultrafast switching in Ta2O5-based resistive memories
2016 IEEE Silicon Nanoelectronics Workshop (SNW), HonoluluHonolulu, HI, 12 Jun 2016 - 13 Jun 20162016-06-122016-06-13 IEEE 1 pp. () [10.1109/SNW.2016.7577995]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices
ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 20162016-09-122016-09-15 IEEE 1 pp. () [10.1109/ESSDERC.2016.7599612]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), NurembergNuremberg, Germany, 6 Sep 2016 - 8 Sep 20162016-09-062016-09-08 IEEE 145 pp. () [10.1109/SISPAD.2016.7605168]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed
5th International Conference Smart and Multifunctional Materials Structures & Systems, CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 9 Jun 20162016-06-052016-06-09 317 pp. () BibTeX | EndNote: XML, Text | RIS

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KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), NurembergNuremberg, Germany, 6 Sep 2016 - 8 Sep 20162016-09-062016-09-08
IEEE 141 pp. () [10.1109/SISPAD.2016.7605167]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
Proceedings of the European Solid-State Device Research Conference
46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 20162016-09-122016-09-15
164-167 () BibTeX | EndNote: XML, Text | RIS

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Impact of Quantized Conductance Effects of ReRAM Devices on Neuromorphic Networks
15th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA),, DresdenDresden, Germany, 23 Aug 2016 - 25 Aug 20162016-08-232016-08-25 2 pp. () BibTeX | EndNote: XML, Text | RIS

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Memristive Phenomena –From Fundamental Physics to Neuromorphic Computing
47th IFF Spring School, JülichJülich, Germany, 22 Feb 2016 - 4 Mar 20162016-02-222016-03-04 Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies 113, getr. Zählung () OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Last Modified: 24.03.2022