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Publications 2013

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Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate
Technical physics letters 39(5), 427 - 430 () [10.1134/S1063785013050039]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Axial strain in GaAs/InAs core-shell nanowires
Applied physics letters 102(4), 043109 - () [10.1063/1.4790185] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
Nanotechnology 24(3), 035203 () [10.1088/0957-4484/24/3/035203]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires
Nanotechnology 24(32), 325201 - () [10.1088/0957-4484/24/32/325201]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Domain formation due to surface steps in topological insulator Bi$_{2}$Te$_{3}$ thin films grown on Si (111) by molecular beam epitaxy
Applied physics letters 103(8), 081902 () [10.1063/1.4818456] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Long electron spin coherence in ion-implanted GaN: The role of localization
Applied physics letters 102(19), 192102 - () [10.1063/1.4804558] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells
Japanese journal of applied physics 52(12R), 122304 () [10.7567/JJAP.52.122304]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Etched graphene quantum dots on hexagonal boron nitride
Applied physics letters 103(7), 073113 () [10.1063/1.4818627] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
Physica status solidi / B 250(12), 2692 - 2696 () [10.1002/pssb.201300295]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride
Physical review / B 88(8), 085419 () [10.1103/PhysRevB.88.085419] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Applied physics letters 103(26), 263103 () [10.1063/1.4855436] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Self-catalyzed VLS grown InAs nanowires with twinning superlattices
Nanotechnology 24(33), 335601 - () [10.1088/0957-4484/24/33/335601]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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The absence of Fraunhofer patterns in narrow Nb/InAs-nanowire/Nb junctions
The Physics of Semiconductors
THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012, ZurichZurich, Switzerland, 29 Jul 2012 - 3 Aug 20122012-07-292012-08-03
AIP conference proceedings 1566, () [10.1063/1.4848309]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
Nanotechnology 24(8), 085603 () [10.1088/0957-4484/24/8/085603]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
IEEE transactions on electron devices 60(10), 3005 - 3011 () [10.1109/TED.2013.2272330]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Spin-polarization limit in $Bi_{2}Te_{3}$ Dirac cone studied by angle- and spin-resolved photoemission experiments and ab initio calculations
Physical review / B 87(3), 035127 () [10.1103/PhysRevB.87.035127] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Development of redox glasses and subsequent processing by means of pulsed laser deposition for realizing silicon-based thin-film sensors.
Electrochimica acta 113, 762 - 767 () [10.1016/j.electacta.2013.08.092]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Strain States in YSZ / RE2O3 (RE = Er, Y) Multilayers as a Function of Layer Thickness and Their Effect on Interface Conductivity and Diffusion
MRS online proceedings library 1542, mrss13-1542-g08-02 () [10.1557/opl.2013.577] BibTeX | EndNote: XML, Text | RIS

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Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
IEEE electron device letters 34(6), 813 - 815 () [10.1109/LED.2013.2258652]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Microelectronic engineering 109, 381 - 384 () [10.1016/j.mee.2013.04.021]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
Journal of nanoparticle research 15(10), 1981 () [10.1007/s11051-013-1981-y]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Applied physics letters 103(23), 231909 - () [10.1063/1.4838695] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Journal of applied physics 113(20), 204902 () [10.1063/1.4807001] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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A study of the structural properties of GaN implanted by various rare-earth ions
Nuclear instruments & methods in physics research / B 307, 446 - 451 () [10.1016/j.nimb.2012.11.079]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1–xLaxCuO2 thin films
Journal of applied physics 113(5), 053911 () [10.1063/1.4790150] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Effect of film thickness and biaxial strain on the curie temperature of EuO
Applied physics letters 102(6), 062404 - () [10.1063/1.4789972] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Epitaxial growth of europium monoxide on diamond
Applied physics letters 103(22), 222402 - () [10.1063/1.4833550] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Graphene-based charge sensors
Nanotechnology 24(44), 444001 - () [10.1088/0957-4484/24/44/444001]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV
Applied physics letters 102(3), 031607 () [10.1063/1.4789524] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
The journal of chemical physics 138(15), 154709 () [10.1063/1.4801324] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
Microelectronic engineering 109, 109 - 112 () [10.1016/j.mee.2013.03.066]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Structural and optical properties of individual GaP/ZnO core–shell nanowires
Vacuum 98, 106 - 110 () [10.1016/j.vacuum.2012.12.005]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Journal of crystal growth 384, 71 - 76 () [10.1016/j.jcrysgro.2013.09.018]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Applied physics letters 102(19), 192904 - () [10.1063/1.4805037] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)
Journal of applied physics 113(5), 053706 () [10.1063/1.4789353] Allianz-OA  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Highly birefringent, low-loss liquid crystals for terahertz applications
APL materials 1, 012107 () [10.1063/1.4808244] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
Journal of electronic materials 42(5), 826 - 832 () [10.1007/s11664-013-2473-7]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Si substrate preparation for the VS and VLS growth of InAs nanowires
Physica status solidi / Rapid research letters 7(10), 840 - 844 () [10.1002/pssr.201307229]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
Journal of crystal growth 378, 506 - 510 () [10.1016/j.jcrysgro.2012.12.035]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters
Japanese journal of applied physics 52, 08JH10 - () [10.7567/JJAP.52.08JH10]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Applied physics letters 103(16), 162904 - () [10.1063/1.4825367] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Frequency anomaly in the Rashba-effect induced magnetization oscillations of a high-mobility two-dimensional electron system
Physical review / B 87(3), 035307 () [10.1103/PhysRevB.87.035307] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Inducing exchange bias in La_{0.67}Sr_{0.33}MnO_{3−δ}/SrTiO_{3} thin films by strain and oxygen deficiency
Physical review / B 88(14), 144427 () [10.1103/PhysRevB.88.144427] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE
16th International Conference on Metalorganic Vapor Phase Epitaxy, Meeting location, Journal of crystal growth 370, 141 - 145 () [10.1016/j.jcrysgro.2012.09.059]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Rapid thermal synthesis of GaN nanocrystals and nanodisks
Journal of nanoparticle research 15(1), 1411 () [10.1007/s11051-012-1411-6]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Probing relaxation times in graphene quantum dots
Nature Communications 4, 1753 () [10.1038/ncomms2738]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Nature Communications 4, 9 () [10.1038/ncomms3351]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range
Nanotechnology 24(40), 405302 - () [10.1088/0957-4484/24/40/405302]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy
Journal of crystal growth 370, 336 - 341 () [10.1016/j.jcrysgro.2012.08.034]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors
Japanese journal of applied physics 52(8S), 08JF05 () [10.7567/JJAP.52.08JF05]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
Applied physics letters 102(19), 192103 - () [10.1063/1.4805034] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys
ECS journal of solid state science and technology 2(5), N99 - N102 () [10.1149/2.006305jss]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Tensely strained GeSn alloys as optical gain media
Applied physics letters 103(19), 192110 - () [10.1063/1.4829360] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6
ECS transactions 50(9), 885-893 () [10.1149/05009.0885ecst]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
Solid state electronics 83, 2 - 9 () [10.1016/j.sse.2013.01.032]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
Semiconductor science and technology 28(8), 085006 - () [10.1088/0268-1242/28/8/085006]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Relaxor ferro- and paraelectricity in anisotropically strained SrTiO3 films
Journal of applied physics 113(16), 164103 - () [10.1063/1.4802676] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese journal of applied physics 52, 08JN02 - () [10.7567/JJAP.52.08JN02]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE transactions on electron devices 60(10), 3040 - 3046 () [10.1109/TED.2013.2277559]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
Nuclear instruments & methods in physics research / B 307, 408 - 411 () [10.1016/j.nimb.2012.11.088]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Generation of THz transients by photoexcited single-crystal GaAs meso-structures
Applied physics / B 113(3), 339 - 344 () [10.1007/s00340-013-5495-1] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Distortions of the coulomb blockade conductance line in scanning gate measurements of inas nanowire based quantum dots
Journal of experimental and theoretical physics 116(1), 138 - 144 () [10.1134/S1063776112130195]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

PhD 2013

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis
Quantum Transport in Nanowire-based Hybrid Devices
170 pp. () = RWTH Aachen, Diss., 2013   Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Realization of III-V semiconductor nano structures towards more efficient (opto-) electronic devices
Jülich : PGI-9: Halbleiter-Nanoelektronik 100 pp. () = RWTH Aachen, Diss., 2013   Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Characterization, integration and reliability of HfO$_2$ and LaLuO$_3$ high-κ/metal gate stacks for CMOS applications
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszetrum Jülich, Reihe Information 28, 177 p () = RWTH Aachen, Diss., 2013 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis
Fabrication, Characterization and Simulation of Band-to-Band Tunneling Field-Effect Transistors Based on Silicon-Germanium
Jülich : Forschungszentrum Jülich GmbH 123p. () = RWTH Aachen, Diss., 2013   Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Intrinsische Quantenpunkte in InAs-Nanodrähten
145 pp. () = RWTH Aachen, Diss., 2013 BibTeX | EndNote: XML, Text | RIS

Diploma thesis 2013

Proceedings and book articels 2013


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